BASIC ELECTRONICS KITS |
| SBL 401 | Semiconductor P-N Junction Diode Characteristics | SBL 402 | Transistor Characteristics |
| SBL 403 | Zener Diode(Reverse Breakdown)Characteristics | SBL 404 | Zener Diode(Voltage Regulation)Characteristics |
| SBL 405 | C-V Characteristics of p-n junction diode | SBL 406 | L.E.D Characteristics |
| SBL 407 | U.J.T Characteristics | SBL 408 | F.E.T Characteristics |
| SBL 409 | MOSFET Characteristics | SBL 410 | Thermistor(glass)Characteristics |
| SBL 411 | Opto Coupler Characteristics | SBL 412 | Photo Diode Characteristics |
| SBL 413 | L.D.R Characteristics | SBL 414 | Photo transistor Characteristics |
| SBL 415 | Photo Voltic cell(solar cell)Characteristics | SBL 416 | Hybrid parameters of transistor in CE configuration |
| SBL 417 | Band gap(energy gap) in semiconductor diode | SBL 418 | Transistor biasing circuits |
| SBL 421 | L.E.D(current v/s illumination)Characteristic | SBL 425 | Thyraton valve char(ionization and firing) |
| SBL 426 | Ionization potential of mercury(Thyraton valve) | SBL 428 | Work function of diode emitter(verification of Richardson law) |
| SBL 429 | Voltage reguator tube(v-r tube)char. | SBL 430 | Photo electric cell(vaccum)characteristics |
| SBL 431 | Planck's constant app. Photo cell | SBL 432 | Verification of Stefan's law using Diode valve |
| SBL 433 | Switching ch. of transistor(ECO) | SBL 434 | Switching ch. of diode & transistor(ECO) |
| SBL 435 | Switching ch. of MOSFET | SBL 436 | Study of Reverse Recovery in diode |
| SBL 437 | Char. of IGBT (ECO) | SBL 438 | PUT Characteristics & Rex Osc. |
| SBL 439 | GTO Thyristor Characteristics | SBL 432T | STEFAN'S CONSTANT EXP. SET UPs |
| SBL 462 | Tunnel Diode Experiment |
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SATISH BROTHERS